IndiumV3, Russie, Analysis, bibRecord, 000201

MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures

Identifieur interne : 000201 ( Russie/Analysis ); précédent : 000200; suivant : 000202

MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures

Auteurs : RBID : Pascal:08-0256895

Descripteurs français

Pascal (Inist)
- Méthode MOVPE, Epitaxie phase vapeur, Mécanisme croissance, Couche mince, Puits quantique multiple, Diffraction RX, Spectrométrie SIMS, Précurseur, Profil profondeur, Semiconducteur III-V, Interface, Couche barrière, Puits quantique, Nitrure d'aluminium, Nitrure d'indium, Nitrure de gallium, Nanomatériau, InGaN, GaN, InAlGaN, 6855J, 6855N, 8115K.

English descriptors

KwdEn :
- Aluminium nitride, Barrier layer, Depth profiles, Gallium nitride, Growth mechanism, III-V semiconductors, Indium nitride, Interfaces, MOVPE method, Multiple quantum well, Nanostructured materials, Precursor, Quantum wells, Secondary ion mass spectrometry, Thin films, VPE, XRD.

Abstract

We report on the growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures by metalorganic vapor phase epitaxy (MOVPE). The composition of the grown films was evaluated by high-resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS) measurements. It was found that increasing the In precursor flow not only increased the In content of the InAlGaN films but also decreased the Al content. Uniform compositional depth profile was achieved when the In content of the films was below 0.02. At higher In contents the InAlGaN/GaN interface became diffused. In the InGaN/InAlGaN MQW samples increasing the In content of the barrier layers to 0.016 was found to cause non-uniform distribution of Al and degrade the optical quality of the samples.

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Pascal:08-0256895

Le document en format XML

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<author><name sortKey="Odnoblyudo, M A" uniqKey="Odnoblyudo M">M. A. Odnoblyudo</name>
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<author><name sortKey="Bougrov, V E" uniqKey="Bougrov V">V. E. Bougrov</name>
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<date when="2008">2008</date>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium nitride</term>
<term>Barrier layer</term>
<term>Depth profiles</term>
<term>Gallium nitride</term>
<term>Growth mechanism</term>
<term>III-V semiconductors</term>
<term>Indium nitride</term>
<term>Interfaces</term>
<term>MOVPE method</term>
<term>Multiple quantum well</term>
<term>Nanostructured materials</term>
<term>Precursor</term>
<term>Quantum wells</term>
<term>Secondary ion mass spectrometry</term>
<term>Thin films</term>
<term>VPE</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Méthode MOVPE</term>
<term>Epitaxie phase vapeur</term>
<term>Mécanisme croissance</term>
<term>Couche mince</term>
<term>Puits quantique multiple</term>
<term>Diffraction RX</term>
<term>Spectrométrie SIMS</term>
<term>Précurseur</term>
<term>Profil profondeur</term>
<term>Semiconducteur III-V</term>
<term>Interface</term>
<term>Couche barrière</term>
<term>Puits quantique</term>
<term>Nitrure d'aluminium</term>
<term>Nitrure d'indium</term>
<term>Nitrure de gallium</term>
<term>Nanomatériau</term>
<term>InGaN</term>
<term>GaN</term>
<term>InAlGaN</term>
<term>6855J</term>
<term>6855N</term>
<term>8115K</term>
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<front><div type="abstract" xml:lang="en">We report on the growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures by metalorganic vapor phase epitaxy (MOVPE). The composition of the grown films was evaluated by high-resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS) measurements. It was found that increasing the In precursor flow not only increased the In content of the InAlGaN films but also decreased the Al content. Uniform compositional depth profile was achieved when the In content of the films was below 0.02. At higher In contents the InAlGaN/GaN interface became diffused. In the InGaN/InAlGaN MQW samples increasing the In content of the barrier layers to 0.016 was found to cause non-uniform distribution of Al and degrade the optical quality of the samples.</div>
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<fA11 i1="02" i2="1"><s1>SVENSK (O.)</s1>
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<fC01 i1="01" l="ENG"><s0>We report on the growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures by metalorganic vapor phase epitaxy (MOVPE). The composition of the grown films was evaluated by high-resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS) measurements. It was found that increasing the In precursor flow not only increased the In content of the InAlGaN films but also decreased the Al content. Uniform compositional depth profile was achieved when the In content of the films was below 0.02. At higher In contents the InAlGaN/GaN interface became diffused. In the InGaN/InAlGaN MQW samples increasing the In content of the barrier layers to 0.016 was found to cause non-uniform distribution of Al and degrade the optical quality of the samples.</s0>
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<s5>01</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>07</s5>
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<fC03 i1="08" i2="3" l="FRE"><s0>Précurseur</s0>
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<s5>08</s5>
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<s5>09</s5>
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<s5>16</s5>
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<s4>INC</s4>
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<s4>INC</s4>
<s5>71</s5>
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MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures

MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures

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